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DTC114YMFHAT2L Технические параметры

ROHM Semiconductor  DTC114YMFHAT2L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased + Diode
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Collector-Emitter Voltage-Max 50V
RoHS Status ROHS3 Compliant

DTC114YMFHAT2L Документы

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