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DTC115EEBTL Технические параметры

ROHM Semiconductor  DTC115EEBTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.15W
Resistor - Base (R1) 100 k Ω
Resistor - Emitter Base (R2) 100 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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DTC115EEBTL Документы

DTC115EEBTL brand manufacturers: ROHM Semiconductor, Anli stock, DTC115EEBTL reference price.ROHM Semiconductor. DTC115EEBTL parameters, DTC115EEBTL Datasheet PDF and pin diagram description download.You can use the DTC115EEBTL Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTC115EEBTL pin diagram and circuit diagram and usage method of function,DTC115EEBTL electronics tutorials.You can download from the Anli.