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DTC115GKAT146 Технические параметры

ROHM Semiconductor  DTC115GKAT146 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Mount Surface Mount
Package / Case SMD/SMT
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 82
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 82
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
DTC115GKAT146 brand manufacturers: ROHM Semiconductor, Anli stock, DTC115GKAT146 reference price.ROHM Semiconductor. DTC115GKAT146 parameters, DTC115GKAT146 Datasheet PDF and pin diagram description download.You can use the DTC115GKAT146 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTC115GKAT146 pin diagram and circuit diagram and usage method of function,DTC115GKAT146 electronics tutorials.You can download from the Anli.