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DTC115TCAT116 Технические параметры

ROHM Semiconductor  DTC115TCAT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Digi-Reel®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 100 k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Просмотр сходства
DTC115TCAT116 brand manufacturers: ROHM Semiconductor, Anli stock, DTC115TCAT116 reference price.ROHM Semiconductor. DTC115TCAT116 parameters, DTC115TCAT116 Datasheet PDF and pin diagram description download.You can use the DTC115TCAT116 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTC115TCAT116 pin diagram and circuit diagram and usage method of function,DTC115TCAT116 electronics tutorials.You can download from the Anli.