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DTC124ECAHZGT116 Технические параметры

ROHM Semiconductor  DTC124ECAHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1.0
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased + Diode
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 22 k Ω
Collector-Emitter Voltage-Max 50V
RoHS Status ROHS3 Compliant

DTC124ECAHZGT116 Документы

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