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DTD123YCHZGT116 Технические параметры

ROHM Semiconductor  DTD123YCHZGT116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.5
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased + Diode
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
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DTD123YCHZGT116 Документы

DTD123YCHZGT116 brand manufacturers: ROHM Semiconductor, Anli stock, DTD123YCHZGT116 reference price.ROHM Semiconductor. DTD123YCHZGT116 parameters, DTD123YCHZGT116 Datasheet PDF and pin diagram description download.You can use the DTD123YCHZGT116 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTD123YCHZGT116 pin diagram and circuit diagram and usage method of function,DTD123YCHZGT116 electronics tutorials.You can download from the Anli.