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DTD543EMT2L Технические параметры

ROHM Semiconductor  DTD543EMT2L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
Max Power Dissipation 150mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTD543
Pin Count 3
Output Voltage 60mV
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Max Frequency 260MHz
Transition Frequency 260MHz
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 4.7 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DTD543EMT2L Документы

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