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- DTDG14GPT100
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DTDG14GPT100 Технические параметры
ROHM Semiconductor DTDG14GPT100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 1 Element | |
| hFEMin | 300 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | 60V | |
| Max Power Dissipation | 2W | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 1A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | DTDG14 | |
| Pin Count | 3 | |
| Max Output Current | 1A | |
| Operating Supply Voltage | 60V | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 500mW | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA 2V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA | |
| Transition Frequency | 80MHz | |
| Max Breakdown Voltage | 60V | |
| Frequency - Transition | 80MHz | |
| Emitter Base Voltage (VEBO) | 5V | |
| Continuous Collector Current | 1A | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| VCEsat-Max | 0.4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DTDG14GPT100 Документы
- PCN Design/SpecificationMult Devices Marking 16/Apr/2018
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