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DTDG23YPT100 Технические параметры

ROHM Semiconductor  DTDG23YPT100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 300
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Voltage - Rated DC 60V
Max Power Dissipation 1.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 10
Свойство продукта Значение свойства
Base Part Number DTDG23
Pin Count 3
JESD-30 Code R-PSSO-F3
Max Output Current 1A
Operating Supply Voltage 60V
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA
Transition Frequency 80MHz
Max Breakdown Voltage 60V
Frequency - Transition 80MHz
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 1A
Resistor - Emitter Base (R2) 22 k Ω
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DTDG23YPT100 Документы

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