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EMG11T2R Технические параметры

ROHM Semiconductor  EMG11T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Number of Pins 5Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 80
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MG11
Pin Count 5
Polarity NPN
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

EMG11T2R Документы

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