Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- /
- EMG1T2R
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
EMG1T2R Технические параметры
ROHM Semiconductor EMG1T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD (5 Leads), Flat Lead | |
| Number of Pins | 5Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 56 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 150mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 30mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *MG1 | |
| Pin Count | 5 | |
| Polarity | NPN | |
| Configuration | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Power Dissipation | 150mW | |
| Transistor Application | SWITCHING | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 250MHz | |
| Resistor - Base (R1) | 22k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 22k Ω | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ