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EMG6T2R Технические параметры

ROHM Semiconductor  EMG6T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Number of Pins 5Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 100
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MG6
Pin Count 5
Polarity NPN
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 47k Ω
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
EMG6T2R brand manufacturers: ROHM Semiconductor, Anli stock, EMG6T2R reference price.ROHM Semiconductor. EMG6T2R parameters, EMG6T2R Datasheet PDF and pin diagram description download.You can use the EMG6T2R Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find EMG6T2R pin diagram and circuit diagram and usage method of function,EMG6T2R electronics tutorials.You can download from the Anli.