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EMT1T2R Технические параметры

ROHM Semiconductor  EMT1T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3/e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating -150mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MT1
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 150mW
Gain Bandwidth Product 140MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 140MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -150mA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
EMT1T2R brand manufacturers: ROHM Semiconductor, Anli stock, EMT1T2R reference price.ROHM Semiconductor. EMT1T2R parameters, EMT1T2R Datasheet PDF and pin diagram description download.You can use the EMT1T2R Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find EMT1T2R pin diagram and circuit diagram and usage method of function,EMT1T2R electronics tutorials.You can download from the Anli.