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EMX1T2R Технические параметры

ROHM Semiconductor  EMX1T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 150mA
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MX1
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 150mW
Gain Bandwidth Product 180MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 150mA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
EMX1T2R brand manufacturers: ROHM Semiconductor, Anli stock, EMX1T2R reference price.ROHM Semiconductor. EMX1T2R parameters, EMX1T2R Datasheet PDF and pin diagram description download.You can use the EMX1T2R Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find EMX1T2R pin diagram and circuit diagram and usage method of function,EMX1T2R electronics tutorials.You can download from the Anli.