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ES6U2T2R Технические параметры
ROHM Semiconductor ES6U2T2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1.5A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 700mW Ta | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e2 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Copper (Sn/Cu) | |
| Additional Feature | ESD PROTECTED | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V | |
| Rise Time | 5ns | |
| Vgs (Max) | ±10V | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 1.5A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain-source On Resistance-Max | 0.24Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| FET Feature | Schottky Diode (Isolated) | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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