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FMA10AT148 Технические параметры

ROHM Semiconductor  FMA10AT148 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ROHM Semiconductor
Factory Lead Time 7 Weeks
Package / Case SC-74A, SOT-753
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 5Pins
hFEMin 33
Number of Elements 2 Elements
Collector-Emitter Breakdown Voltage 50V
Published 2001
Packaging Tape & Reel (TR)
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 10
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 5
Max Output Current 100mA
Operating Supply Voltage 50V
Polarity PNP
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 1k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free

FMA10AT148 Документы

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