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FMY1AT148 Технические параметры

ROHM Semiconductor  FMY1AT148 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Number of Pins 5Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Collector-Emitter Breakdown Voltage 50V
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 150mA
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *MY1
Pin Count 5
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Transistor Type NPN, PNP (Emitter Coupled)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Frequency - Transition 180MHz 140MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 150mA
VCEsat-Max 0.4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FMY1AT148 Документы

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