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IMD9AT108 Технические параметры
ROHM Semiconductor IMD9AT108 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 13 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 68 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
| HTS Code | 8541.21.00.75 | |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *MD9 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 300mW | |
| Transistor Application | SWITCHING | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Transition Frequency | 250MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 250MHz | |
| Emitter Base Voltage (VEBO) | 5V | |
| Resistor - Base (R1) | 10k Ω | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| VCEsat-Max | 0.3 V | |
| Height | 1.2mm | |
| Length | 3mm | |
| Width | 1.8mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IMD9AT108 Документы
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