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IMN10T108 Технические параметры
ROHM Semiconductor IMN10T108 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Number of Pins | 6Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 3 Elements | |
| Voltage Rated | 50V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| Tolerance | 1% | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Capacitance | 3.8pF | |
| Voltage - Rated DC | 80V | |
| Max Power Dissipation | 300mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 100mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | MN10 | |
| Pin Count | 6 | |
| Case Code (Metric) | 1005 | |
| Case Code (Imperial) | 0402 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 100nA @ 70V | |
| Power Dissipation | 300mW | |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA | |
| Forward Current | 100mA | |
| Operating Temperature - Junction | 150°C Max | |
| Max Surge Current | 4A | |
| Output Current-Max | 0.1A | |
| Forward Voltage | 1.2V | |
| Reverse Recovery Time | 4 ns | |
| Peak Reverse Current | 100nA | |
| Max Repetitive Reverse Voltage (Vrrm) | 80V | |
| Peak Non-Repetitive Surge Current | 4A | |
| Diode Configuration | 3 Independent | |
| Max Forward Surge Current (Ifsm) | 300mA | |
| Recovery Time | 4 ns | |
| Reverse Test Voltage | 70V | |
| Height | 1.1mm | |
| Length | 990.6μm | |
| Width | 508μm | |
| Thickness | 558.8μm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IMN10T108 Документы
- DatasheetsIMN10
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