Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IMT4T108 Технические параметры
ROHM Semiconductor IMT4T108 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 9 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74, SOT-457 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 120V | |
| Number of Elements | 2 Elements | |
| hFEMin | 180 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| HTS Code | 8541.21.00.75 | |
| Voltage - Rated DC | -120V | |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -50mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | MT4 | |
| Pin Count | 6 | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 300mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 140MHz | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | |
| Transition Frequency | 140MHz | |
| Max Breakdown Voltage | 120V | |
| Collector Base Voltage (VCBO) | -120V | |
| Emitter Base Voltage (VEBO) | -5V | |
| VCEsat-Max | 0.5 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IMT4T108 Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ