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IMX1T108 Технические параметры

ROHM Semiconductor  IMX1T108 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ROHM Semiconductor
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case SMD/SMT
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 120
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e1
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Свойство продукта Значение свойства
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
DC Current Gain-Min (hFE) 120
Continuous Collector Current 150mA
VCEsat-Max 0.4 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства
IMX1T108 brand manufacturers: ROHM Semiconductor, Anli stock, IMX1T108 reference price.ROHM Semiconductor. IMX1T108 parameters, IMX1T108 Datasheet PDF and pin diagram description download.You can use the IMX1T108 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find IMX1T108 pin diagram and circuit diagram and usage method of function,IMX1T108 electronics tutorials.You can download from the Anli.