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MMST918T146 Технические параметры
ROHM Semiconductor MMST918T146 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ROHM Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SMT3 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Voltage, Rating | 25 V | |
| Package | Tape & Reel (TR) | |
| Current-Collector (Ic) (Max) | 50A | |
| Base Product Number | MMST918 | |
| Mfr | Rohm Semiconductor | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 10 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 600 MHz | |
| Manufacturer Part Number | MMST918T146 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ROHM Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Risk Rank | 5.71 | |
| Part Package Code | SC-59 | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| Tolerance | 0.5 % | |
| JESD-609 Code | e1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Temperature Coefficient | 50 ppm/°C | |
| Resistance | 7.06 kΩ | |
| Terminal Finish | TIN SILVER COPPER | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Power Rating | 63 mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 200mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 1V | |
| Gain | 15dB | |
| Voltage - Collector Emitter Breakdown (Max) | 15V | |
| Frequency - Transition | 600MHz | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Collector-Base Capacitance-Max | 3 pF | |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz | |
| Height | 350 µm |
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