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QH8KA4TCR Технические параметры

ROHM Semiconductor  QH8KA4TCR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.5W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.017Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 6.2 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Просмотр сходства

QH8KA4TCR Документы

QH8KA4TCR brand manufacturers: ROHM Semiconductor, Anli stock, QH8KA4TCR reference price.ROHM Semiconductor. QH8KA4TCR parameters, QH8KA4TCR Datasheet PDF and pin diagram description download.You can use the QH8KA4TCR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QH8KA4TCR pin diagram and circuit diagram and usage method of function,QH8KA4TCR electronics tutorials.You can download from the Anli.