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QH8MA3TCR Технические параметры

ROHM Semiconductor  QH8MA3TCR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7A 5.5A
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 5.5A
Drain-source On Resistance-Max 0.029Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 1.8 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Просмотр сходства

QH8MA3TCR Документы

QH8MA3TCR brand manufacturers: ROHM Semiconductor, Anli stock, QH8MA3TCR reference price.ROHM Semiconductor. QH8MA3TCR parameters, QH8MA3TCR Datasheet PDF and pin diagram description download.You can use the QH8MA3TCR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QH8MA3TCR pin diagram and circuit diagram and usage method of function,QH8MA3TCR electronics tutorials.You can download from the Anli.