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QS5K2TR Технические параметры
ROHM Semiconductor QS5K2TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 21 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 100MOhm | |
| Terminal Finish | TIN SILVER COPPER | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 1.25W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *K2 | |
| Pin Count | 5 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.25W | |
| Turn On Delay Time | 8 ns | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V | |
| Rise Time | 10ns | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 2A | |
| Threshold Voltage | 1.5V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 2A | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 8A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 1.5 V | |
| Height | 850μm | |
| Length | 2.9mm | |
| Width | 1.6mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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