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QS6J11TR Технические параметры

ROHM Semiconductor  QS6J11TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Turn Off Delay Time 65 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 600mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *J11
Pin Count 6
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-G8
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 17ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.105Ohm
Pulsed Drain Current-Max (IDM) 8A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

QS6J11TR Документы

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