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QS6J1TR Технические параметры
ROHM Semiconductor QS6J1TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ROHM Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 340MOhm | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 1.25W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -1.5A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | *J1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.25W | |
| Turn On Delay Time | 10 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 215m Ω @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V | |
| Rise Time | 12ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | 1.5A | |
| Threshold Voltage | -2V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -20V | |
| Pulsed Drain Current-Max (IDM) | 6A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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