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QS6K21FRATR Технические параметры
Rohm Semiconductor QS6K21FRATR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | TSMT6 (SC-95) | |
| Mfr | Rohm Semiconductor | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 1A (Ta) | |
| Base Product Number | QS6K21 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | AEC-Q101 | |
| Continuous Drain Current Id | 1A | |
| Vds - Drain-Source Breakdown Voltage | 45 V | |
| Typical Turn-On Delay Time | 6 ns | |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V | |
| Pd - Power Dissipation | 1.25 W | |
| Transistor Polarity | N-Channel, NPN | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 12 V, + 12 V | |
| Unit Weight | 0.000353 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement | |
| Part # Aliases | QS6K21FRA | |
| Manufacturer | ROHM Semiconductor | |
| Brand | ROHM Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qg - Gate Charge | 1.5 nC | |
| Rds On - Drain-Source Resistance | 300 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 16 ns | |
| Id - Continuous Drain Current | 1 A | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Dual | |
| Number of Channels | 2 ChannelChannel | |
| Power Dissipation | 1.25W | |
| Power - Max | 950mW (Ta) | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V | |
| Rise Time | 8 ns | |
| Drain to Source Voltage (Vdss) | 45V | |
| Product Type | MOSFET | |
| Transistor Type | 2 N-Channel | |
| Channel Type | Dual N | |
| FET Feature | Standard | |
| Product Category | MOSFET |
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