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QS6K21TR Технические параметры
ROHM Semiconductor QS6K21TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 16 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 1.25W | |
| Terminal Form | GULL WING | |
| Base Part Number | *K21 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.25W | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Rise Time | 8ns | |
| Drain to Source Voltage (Vdss) | 45V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 1A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 1A | |
| Drain to Source Breakdown Voltage | 45V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Drain to Source Resistance | 300mOhm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
QS6K21TR Документы
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