Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
QS6M4TR Технические параметры
ROHM Semiconductor QS6M4TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 45 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 1.25W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 1.5A | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | *M4 | |
| Pin Count | 6 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.25W | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 230m Ω @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V | |
| Rise Time | 12ns | |
| Drain to Source Voltage (Vdss) | 30V 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | 1.5A | |
| Threshold Voltage | 1.5V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain-source On Resistance-Max | 0.245Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
QS6M4TR Документы
- PCN Design/SpecificationTSMT Package Updates 24/Dec/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ