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QS8J13TR Технические параметры

ROHM Semiconductor  QS8J13TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 15mOhm
Max Power Dissipation 1.25W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.25W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 5.5A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
QS8J13TR brand manufacturers: ROHM Semiconductor, Anli stock, QS8J13TR reference price.ROHM Semiconductor. QS8J13TR parameters, QS8J13TR Datasheet PDF and pin diagram description download.You can use the QS8J13TR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QS8J13TR pin diagram and circuit diagram and usage method of function,QS8J13TR electronics tutorials.You can download from the Anli.