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ROHM Semiconductor QS8J5TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ROHM Semiconductor | |
Factory Lead Time | 10 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SMD, Flat Lead | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 90 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2014 | |
JESD-609 Code | e2 | |
Pbfree Code | yes | |
Part Status | Not For New Designs | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Max Power Dissipation | 600mW | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 10 |
Свойство продукта | Значение свойства | |
---|---|---|
Pin Count | 8 | |
Number of Channels | 2Channels | |
Operating Mode | ENHANCEMENT MODE | |
Turn On Delay Time | 9 ns | |
FET Type | 2 P-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 39m Ω @ 5A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V | |
Rise Time | 40ns | |
Drain to Source Voltage (Vdss) | 30V | |
Fall Time (Typ) | 55 ns | |
Continuous Drain Current (ID) | 5A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain Current-Max (Abs) (ID) | 5A | |
Drain-source On Resistance-Max | 0.039Ohm | |
DS Breakdown Voltage-Min | 30V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |