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QS8K13TCR Технические параметры

ROHM Semiconductor  QS8K13TCR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Power Dissipation 550mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Свойство продукта Значение свойства
Pin Count 8
JESD-30 Code R-PDSO-F8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 550mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.039Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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QS8K13TCR Документы

QS8K13TCR brand manufacturers: ROHM Semiconductor, Anli stock, QS8K13TCR reference price.ROHM Semiconductor. QS8K13TCR parameters, QS8K13TCR Datasheet PDF and pin diagram description download.You can use the QS8K13TCR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QS8K13TCR pin diagram and circuit diagram and usage method of function,QS8K13TCR electronics tutorials.You can download from the Anli.