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QS8M31TR Технические параметры

ROHM Semiconductor  QS8M31TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Ta 2A Ta
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Свойство продукта Значение свойства
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.1W Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA, 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 270pF 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC, 7.2nC @ 5V
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.137Ohm
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 1.4 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Просмотр сходства

QS8M31TR Документы

QS8M31TR brand manufacturers: ROHM Semiconductor, Anli stock, QS8M31TR reference price.ROHM Semiconductor. QS8M31TR parameters, QS8M31TR Datasheet PDF and pin diagram description download.You can use the QS8M31TR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QS8M31TR pin diagram and circuit diagram and usage method of function,QS8M31TR electronics tutorials.You can download from the Anli.