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QS8M51TR Технические параметры

ROHM Semiconductor  QS8M51TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ROHM Semiconductor
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2A 1.5A
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Base Part Number *M51
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 325m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 5V
Drain to Source Voltage (Vdss) 100V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.355Ohm
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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QS8M51TR Документы

QS8M51TR brand manufacturers: ROHM Semiconductor, Anli stock, QS8M51TR reference price.ROHM Semiconductor. QS8M51TR parameters, QS8M51TR Datasheet PDF and pin diagram description download.You can use the QS8M51TR Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find QS8M51TR pin diagram and circuit diagram and usage method of function,QS8M51TR electronics tutorials.You can download from the Anli.