Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
QSX5TR Технические параметры
ROHM Semiconductor QSX5TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ROHM Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Collector-Emitter Saturation Voltage | 90mV | |
| Number of Elements | 1 Element | |
| hFEMin | 270 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| HTS Code | 8541.21.00.75 | |
| Voltage - Rated DC | -12V | |
| Max Power Dissipation | 1.25W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | QSX | |
| Element Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 360MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 2A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A | |
| Transition Frequency | 360MHz | |
| Max Breakdown Voltage | 12V | |
| Collector Base Voltage (VCBO) | 15V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
QSX5TR Документы
- DatasheetsQSX5
- PCN Design/SpecificationTSMT Package Updates 24/Dec/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ