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QSX8TR Технические параметры
ROHM Semiconductor QSX8TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 20 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 2 Elements | |
| hFEMin | 270 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 1.25W | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | QSX | |
| Pin Count | 6 | |
| Polarity | NPN | |
| Element Configuration | Dual | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 320MHz | |
| Transistor Type | 2 NPN (Dual) | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA | |
| Transition Frequency | 320MHz | |
| Max Breakdown Voltage | 30V | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Continuous Collector Current | 1A | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
QSX8TR Документы
- PCN Design/SpecificationTSMT Package Updates 24/Dec/2014
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