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RBQ30NS100ATL Технические параметры

Rohm Semiconductor  RBQ30NS100ATL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263S
Mfr Rohm Semiconductor
Product Status Active
Current - Average Rectified (Io) (per Diode) 30A
Qualification -
Number of Elements per Chip 2Elements per Chips
Package Type TO-263S
Rectifier Type Schottky Diode
Vr - Reverse Voltage 100 V
Ir - Reverse Current 200 uA
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 1000
Mounting Styles SMD/SMT
Vrrm - Repetitive Reverse Voltage 100 V
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
If - Forward Current 30 A
Свойство продукта Значение свойства
RoHS Details
Ifsm - Forward Surge Current 100 A
Series Automotive, AEC-Q101
Packaging Cut Tape
Subcategory Diodes & Rectifiers
Technology Si
Pin Count 3
Configuration Dual Anode Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200 μA @ 100 V
Voltage - Forward (Vf) (Max) @ If 770 mV @ 15 A
Operating Temperature - Junction 150°C
Voltage - DC Reverse (Vr) (Max) 100 V
Product Type Schottky Diodes & Rectifiers
Diode Configuration 1 Pair Common Cathode
Repetitive Peak Reverse Voltage 100V
Product Schottky Diodes
Vf - Forward Voltage 770 mV
Product Category Schottky Diodes & Rectifiers
Просмотр сходства
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