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RBQ30NS65AFHTL Технические параметры

ROHM Semiconductor  RBQ30NS65AFHTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ROHM Semiconductor
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Applications GENERAL PURPOSE
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 450μA @ 65V
Voltage - Forward (Vf) (Max) @ If 690mV @ 15A
Forward Current 30A
Operating Temperature - Junction 150°C Max
Output Current-Max 15A
Voltage - DC Reverse (Vr) (Max) 65V
Number of Phases 1Phase
Reverse Recovery Time 16.1ns
Rep Pk Reverse Voltage-Max 65V
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 200μA
RoHS Status ROHS3 Compliant

RBQ30NS65AFHTL Документы

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