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RBR10BGE60ATL Технические параметры
ROHM Semiconductor RBR10BGE60ATL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ROHM Semiconductor | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AB, SMC | |
| Supplier Device Package | DO-214AB (SMCJ) | |
| Package | Bulk | |
| Base Product Number | SMCJ10 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Peak Rep Rev Volt | 60(V) | |
| Peak Forward Voltage | 0.65@5A(V) | |
| Operating Temperature Classification | Military | |
| Package Type | DPAK | |
| Maximum Forward Current | 10000(mA) | |
| Operating Temp Range | -55C to 150C | |
| Rad Hardened | No | |
| Rectifier Type | Schottky Diode | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 2Elements per Chips | |
| Qualification | - | |
| Vr - Reverse Voltage | 60 V | |
| Ir - Reverse Current | 200 uA | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Mounting Styles | SMD/SMT | |
| Vrrm - Repetitive Reverse Voltage | 60 V | |
| Manufacturer | ROHM Semiconductor | |
| Brand | ROHM Semiconductor | |
| If - Forward Current | 10 A | |
| RoHS | Details | |
| Ifsm - Forward Surge Current | 50 A | |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Series | Military, MIL-PRF-19500 | |
| Packaging | Tape and Reel | |
| Type | Zener | |
| Applications | General Purpose | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Si | |
| Pin Count | 2 +Tab | |
| Configuration | Dual Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 200 µA @ 60 V | |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 5 A | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 11.1V | |
| Power - Peak Pulse | 1500W (1.5kW) | |
| Current - Peak Pulse (10/1000μs) | 88.2A | |
| Voltage - Clamping (Max) @ Ipp | 17V | |
| Voltage - Reverse Standoff (Typ) | 10V | |
| Operating Temperature - Junction | 150°C | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Product Type | Schottky Diodes & Rectifiers | |
| Bidirectional Channels | 1 | |
| Peak Reverse Current | 200(uA) | |
| Capacitance @ Frequency | - | |
| Peak Non-Repetitive Surge Current | 50(A) | |
| Diode Configuration | 2x Common Cathode Pair | |
| Repetitive Peak Reverse Voltage | 60V | |
| Product | Schottky Diodes | |
| Vf - Forward Voltage | 650 mV | |
| Product Category | Schottky Diodes & Rectifiers | |
| Product Length (mm) | 6.6(mm) |
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