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RBR10T60ANZC9 Технические параметры
Rohm Semiconductor RBR10T60ANZC9 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220FN | |
| Mfr | Rohm Semiconductor | |
| Package | Tube | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 5A | |
| Base Product Number | RBR10 | |
| Number of Elements per Chip | 2Elements per Chips | |
| Package Type | TO-220FN | |
| Vr - Reverse Voltage | 60 V | |
| Ir - Reverse Current | 200 uA | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Mounting Styles | Through Hole | |
| Vrrm - Repetitive Reverse Voltage | 60 V | |
| Part # Aliases | RBR10T60ANZ | |
| Manufacturer | ROHM Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | ROHM Semiconductor | |
| If - Forward Current | 10 A | |
| RoHS | Details | |
| Ifsm - Forward Surge Current | 50 A | |
| Series | - | |
| Packaging | Tube | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Si | |
| Pin Count | 3 | |
| Configuration | Dual Anode Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 200 μA @ 60 V | |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 5 A | |
| Operating Temperature - Junction | 150°C | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Product Type | Schottky Diodes & Rectifiers | |
| Diode Configuration | 1 Pair Common Cathode | |
| Product | Schottky Diodes | |
| Vf - Forward Voltage | 650 mV | |
| Product Category | Schottky Diodes & Rectifiers |
Индекс :
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