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Rohm Semiconductor RBR2L60ADDTE25 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AC, SMA | |
| Supplier Device Package | PMDS | |
| Mfr | Rohm Semiconductor | |
| Product Status | Active | |
| Qualification | - | |
| Number of Elements per Chip | 1 | |
| Package Type | DO-214AC (SMA) | |
| Rectifier Type | Schottky Diode | |
| Vr - Reverse Voltage | 60 V | |
| Ir - Reverse Current | 75 uA | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1500 | |
| Mounting Styles | SMD/SMT | |
| Vrrm - Repetitive Reverse Voltage | 60 V | |
| Part # Aliases | RBR2L60ADD | |
| Manufacturer | ROHM Semiconductor | |
| Brand | ROHM Semiconductor | |
| If - Forward Current | 2 A | |
| RoHS | Details |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ifsm - Forward Surge Current | 30 A | |
| Series | Automotive, AEC-Q101 | |
| Packaging | Cut Tape | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Si | |
| Pin Count | 2 | |
| Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 75 μA @ 60 V | |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 2 A | |
| Operating Temperature - Junction | 150°C | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Current - Average Rectified (Io) | 2A | |
| Product Type | Schottky Diodes & Rectifiers | |
| Capacitance @ Vr, F | - | |
| Diode Configuration | Single | |
| Repetitive Peak Reverse Voltage | 60V | |
| Product | Schottky Diodes | |
| Vf - Forward Voltage | 650 mV | |
| Product Category | Schottky Diodes & Rectifiers |