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RDN120N25 Технические параметры

ROHM Semiconductor  RDN120N25 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ROHM Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 40W Tc
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 250V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.21Ohm
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 216 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

RDN120N25 Документы

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