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RDN120N25FU6 Технические параметры

ROHM Semiconductor  RDN120N25FU6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ROHM Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25℃ 12A Ta
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 40W Tc
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 210m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage 250V
RoHS Status ROHS3 Compliant
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RDN120N25FU6 Документы

RDN120N25FU6 brand manufacturers: ROHM Semiconductor, Anli stock, RDN120N25FU6 reference price.ROHM Semiconductor. RDN120N25FU6 parameters, RDN120N25FU6 Datasheet PDF and pin diagram description download.You can use the RDN120N25FU6 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find RDN120N25FU6 pin diagram and circuit diagram and usage method of function,RDN120N25FU6 electronics tutorials.You can download from the Anli.