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RFN1L6STE25 Технические параметры
ROHM Semiconductor RFN1L6STE25 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AC, SMA | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Base Part Number | RFN1L6S |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1μA @ 600V | |
| Voltage - Forward (Vf) (Max) @ If | 1.45V @ 800mA | |
| Forward Current | 800mA | |
| Max Reverse Leakage Current | 1μA | |
| Operating Temperature - Junction | 150°C Max | |
| Max Surge Current | 15A | |
| Output Current-Max | 0.8A | |
| Max Reverse Voltage (DC) | 600V | |
| Average Rectified Current | 800mA | |
| Reverse Recovery Time | 35 ns | |
| Peak Reverse Current | 1μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 600V | |
| Peak Non-Repetitive Surge Current | 15A | |
| Recovery Time | 25 ns | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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