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RGCL80TK60GC11 Технические параметры
ROHM Semiconductor RGCL80TK60GC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 17 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PFM, SC-93-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 35A | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 40A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE | |
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Power - Max | 57W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Turn On Time | 114 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A | |
| Turn Off Time-Nom (toff) | 565 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 98nC | |
| Current - Collector Pulsed (Icm) | 160A | |
| Td (on/off) @ 25°C | 53ns/227ns | |
| Switching Energy | 1.11mJ (on), 1.68mJ (off) | |
| RoHS Status | ROHS3 Compliant |
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