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RGS00TS65EHRC11 Технические параметры

Rohm Semiconductor  RGS00TS65EHRC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Mfr Rohm Semiconductor
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 88 A
Test Conditions 400V, 50A, 10Ohm, 15V
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Maximum Gate Emitter Voltage - 30 V, + 30 V
Pd - Power Dissipation 326 W
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 450
Mounting Styles Through Hole
Manufacturer ROHM Semiconductor
Brand ROHM Semiconductor
RoHS Details
Свойство продукта Значение свойства
Collector- Emitter Voltage VCEO Max 650 V
Series -
Operating Temperature -40°C ~ 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Technology Si
Configuration Single
Power Dissipation 326W
Input Type Standard
Power - Max 326 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Continuous Collector Current 88
IGBT Type Trench Field Stop
Gate Charge 58 nC
Current - Collector Pulsed (Icm) 150 A
Td (on/off) @ 25°C 36ns/115ns
Switching Energy -
Reverse Recovery Time (trr) 113 ns
Product Category IGBT Transistors
Просмотр сходства
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