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RGS60TS65DHRC11 Технические параметры

ROHM Semiconductor  RGS60TS65DHRC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ROHM Semiconductor
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Current-Collector (Ic) (Max) 56A
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Input Type Standard
Power - Max 223W
Reverse Recovery Time 103ns
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 36nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 28ns/104ns
Switching Energy 660μJ (on), 810μJ (off)
RoHS Status RoHS Compliant
Просмотр сходства
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