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RGT40NS65DGTL Технические параметры
ROHM Semiconductor RGT40NS65DGTL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ROHM Semiconductor | |
| Factory Lead Time | 17 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Weight | 1.946308g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Number of Elements | 1 Element | |
| Test Conditions | 400V, 20A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 161W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 161W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 40A | |
| Reverse Recovery Time | 58 ns | |
| Max Breakdown Voltage | 650V | |
| Turn On Time | 51 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A | |
| Continuous Collector Current | 20A | |
| Turn Off Time-Nom (toff) | 204 ns | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 40nC | |
| Current - Collector Pulsed (Icm) | 60A | |
| Td (on/off) @ 25°C | 22ns/75ns | |
| REACH SVHC | Unknown | |
| RoHS Status | ROHS3 Compliant |
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