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RGTH60TS65DGC11 Технические параметры

ROHM Semiconductor  RGTH60TS65DGC11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ROHM Semiconductor
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 194W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 194W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 58A
Reverse Recovery Time 58 ns
Turn On Time 67 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 179 ns
IGBT Type Trench Field Stop
Gate Charge 58nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 27ns/105ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Просмотр сходства
RGTH60TS65DGC11 brand manufacturers: ROHM Semiconductor, Anli stock, RGTH60TS65DGC11 reference price.ROHM Semiconductor. RGTH60TS65DGC11 parameters, RGTH60TS65DGC11 Datasheet PDF and pin diagram description download.You can use the RGTH60TS65DGC11 Transistors - IGBTs - Single, DSP Datesheet PDF, find RGTH60TS65DGC11 pin diagram and circuit diagram and usage method of function,RGTH60TS65DGC11 electronics tutorials.You can download from the Anli.